PART |
Description |
Maker |
M5M5V416WG-70LI M5M5V416BWG M5M5V416BWG-10H M5M5V4 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位(262144字由16位)的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp. http://
|
GM71C4256 |
262144 word x 4 Bit CMOS DRAM
|
GoldStar
|
M5M5256DFP-10VLL M5M5256DFP-10VXL M5M5256DFP-12VLL |
From old datasheet system Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM 262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
AK63264BZ |
65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
AK62464Z |
65,536 x 24 Bit CMOS/BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29 |
4 Megabit (524288 x 8-Bit/262144 x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
AK632256Z-15 |
262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION http://
|
AK632512AW AK632512AW-15 |
524,288 x 32 Bit CMOS / BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|